Hynix Announces DRAM Industry's First 1Gb DDR2

SEOUL, Korea--(BUSINESS WIRE)--Aug. 11, 2003--Hynix Semiconductor Inc. (Hynix, www.hynix.com), announced today that it has successfully completed development of its 1Gb DDR2. Hynix will begin sampling its 1Gb DDR2 in early 4Q 2003 and will begin its full-scale volume production by early 2004 to coincide with the release of Intel's DDR2 chipset.

Hynix will utilize its Golden Chip 0.11-micron process technology for production of its 1Gb DDR2 and 512Mb DDR2. By effectively utilizing existing equipment, Golden Chip technology allows mass production of 0.11-micron technology products with minimum additional investment in capital expenditures. The company estimates the use of its 0.11-micron technology will reduce overall investment requirements by 50% compared to its competitors and will increase the number of die per wafer by 40% in comparison to its .13-micron Prime Chip technology, maintaining Hynix's competitive position in cost and technology.

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Hynix's 1Gb and 512Mb DDR2 will be offered in 68-Ball, and 60/84-Ball Fine-Pitch Ball Grid Array (FBGA) package and fully complies with JEDEC specification and standards.

About Hynix Semiconductor Inc.

Hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. Hynix Semiconductor is the world's leading DRAM supplier with thirteen semiconductor-manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, Hynix is expanding its system IC business unit with leading technology and added deep sub-micron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Hynix maintains worldwide development, manufacturing, sales and marketing facilities.